DSpace Collection:http://hdl.handle.net/2381/106212016-05-05T21:58:02Z2016-05-05T21:58:02ZSaturn's Seasonal Atmosphere: Temperatures, Clouds and CompositionFletcher, Leigh NicholasGreathouse, T. K.Moses, J.Guerlet, S.West, R. A.http://hdl.handle.net/2381/369442016-03-03T03:27:57Z2016-03-02T10:39:22ZTitle: Saturn's Seasonal Atmosphere: Temperatures, Clouds and Composition
Authors: Fletcher, Leigh Nicholas; Greathouse, T. K.; Moses, J.; Guerlet, S.; West, R. A.
Description: The file associated with this record is under a 6-month embargo from publication in accordance with the publisher's self-archiving policy. The full text may be available through the publisher links provided above.2016-03-02T10:39:22ZHe Droplets: A fluid with Unusual Propertiesvon Haeften, KlausHavenith, Martinahttp://hdl.handle.net/2381/96752012-07-24T13:17:28Z2011-09-12T15:11:03ZTitle: He Droplets: A fluid with Unusual Properties
Authors: von Haeften, Klaus; Havenith, Martina
Description: Metadata only entry2011-09-12T15:11:03ZIonospheric Signatures of ULF Waves: Active Radar TechniquesYeoman, Tim K.Wright, D.M.Baddeley, L.J.http://hdl.handle.net/2381/81802012-07-23T13:22:58Z2010-07-06T15:53:37ZTitle: Ionospheric Signatures of ULF Waves: Active Radar Techniques
Authors: Yeoman, Tim K.; Wright, D.M.; Baddeley, L.J.
Description: Metadata only entry2010-07-06T15:53:37ZThe effects of self assembled dot geometry in Auger recombination rates.Chaney, DarrenRoy, MervynMaksym, P.A.Long, F.http://hdl.handle.net/2381/76042012-07-24T13:16:40Z2010-03-02T14:34:45ZTitle: The effects of self assembled dot geometry in Auger recombination rates.
Authors: Chaney, Darren; Roy, Mervyn; Maksym, P.A.; Long, F.
Description: This paper was published in: Physics of semiconductors 2002 : proceedings of the 26th International Conference on the Physics of Semiconductors held in Edinburgh, UK, 29 July-2 August 2002 / edited by A.R. Long and J.H. Davies, published by Institute of Physics, 2003. It is available from http://www.iop.org/Conferences/Conference%20Proceedings/index.html; Metadata only entry2010-03-02T14:34:45ZEfficient Calculation of Electron States in Self-Assembled Quantum Dots: Application to Auger RelaxationChaney, DarrenRoy, MervynMaksym, P.A.http://hdl.handle.net/2381/75882015-12-04T11:37:54Z2010-03-01T15:11:58ZTitle: Efficient Calculation of Electron States in Self-Assembled Quantum Dots: Application to Auger Relaxation
Authors: Chaney, Darren; Roy, Mervyn; Maksym, P.A.
Abstract: An efficient method for calculation of self-assembled dot states within the effective mass approximation is described and its application to the calculation of Auger relaxation rates is detailed. The method is based on expansion of the dot states in a harmonic oscillator basis whose parameters are optimised to improve the convergence rate. This results in at least an order of magnitude reduction in the number of basis states required to represent electron states accurately compared to the conventional plane wave approach. Auger relaxation rates are calculated for harmonic oscillator model states and exact states for various pyramidal models. The dipole approximation, previously used to calculate Auger rates, is found to be inaccurate by a factor of around 2–3. The harmonic oscillator states do not reproduce the rates for the more realistic pyramidal models very well and even within the set of pyramidal models variations in the dot shape and size can change the rates by up to an order of magnitude. Typical Auger relaxation rates are on a picosecond timescale but the actual value is strongly dependent on the density of electrons outside the dot.
Description: This is the author's final draft of the paper published as: Quantum Dots: Fundamentals, Applications, and Frontiers: Proceedings of the NATO Advanced Research Workshop on Quantum Dots: Fundamentals, Applications and Frontiers Crete, Greece, 20-24 July 2003 / edited by Bruce A. Joyce, Pantelis C. Kelires, Anton G. Naumovets, Dimitri D. Vvedensky, pp. 239-255. The final version is available from http://www.springerlink.com/content/k56545x7806611m4/. Doi: 10.1007/1-4020-3315-X_162010-03-01T15:11:58Z