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Title: Influence of Semicon Shields on the Dielectric Loss of XLPE Cables
Authors: Liu, Tong
Fothergill, John C.
Dodd, Stephen J.
Nilsson, Ulf
First Published: 18-Oct-2009
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Citation: IEEE Conference on Electrical Insulation and Dielectric Phenomena, 2009, Proceedings of, pp. 246-249
Abstract: Dielectric response measurement techniques in both time and frequency domains are studied in order to measure the dielectric loss of XLPE cables, which have very low losses. A high sensitivity transformer ratio bridge system, which can measure loss tangents as low as 10-5, has been developed with the ability to measure these cables. A tuned amplifier was designed to help to extend the frequency range from 200Hz to 20kHz. Different model cables from Borealis AB with different semiconducting materials have been measured in the temperature range 15⁰C to 120⁰C. It is found that the semiconducting layers dominate the dielectric loss in the insulation system of the XLPE cables, when the outer semicon is treated as measuring electrode. In this case, steadily increasing dielectric loss has been measured at higher frequencies. The resistivity of the semiconducting materials was measured, which confirmed that the increasing slope is due to the semiconducting layers. After using conductive tapes to wrap the cable samples, monotonically decreasing losses were measured, corresponding to the actual dielectric frequency response of the XLPE cables. It is concluded that the axial resistance of semiconducting shields have a substantial influence on the dielectric loss of XLPE cables, especially for dielectric response in high frequency range. A device on measuring the loss of such cables is presented.
DOI Link: 10.1109/CEIDP.2009.5377792
ISSN: 0084-9162
ISBN: 978-1-4244-4557-8
Version: Post-print
Status: Peer-reviewed
Type: Conference Paper
Rights: © 2009 IEEE. Deposited with reference to IEEE's archiving policy available on the publisher's website. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Appears in Collections:Conference Papers & Presentations, Dept. of Engineering

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