Please use this identifier to cite or link to this item: http://hdl.handle.net/2381/20510
Title: Effect of proton irradiation induced defects on 4H-SiC Schottky diode X-ray detectors
Authors: Steven, RC
Vassilevski, K
Wright, NG
Horsfall, AB
Lees, JE
First Published: 2011
Citation: MATERIALS SCIENCE FORUM, 2011, 679-680, pp. 547-550
DOI Link: 10.4028/www.scientific.net/MSF.679-680.547
ISSN: 0255-5476
Links: http://hdl.handle.net/2381/20510
Type: Journal Article
Appears in Collections:Published Articles, Dept. of Physics and Astronomy

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