Please use this identifier to cite or link to this item: http://hdl.handle.net/2381/27832
Title: An analytical model for the growth of quantum dots on ultrathin substrates
Authors: Gill, Simon P.A.
First Published: 22-Apr-2011
Publisher: American Institute of Physics
Citation: Applied Physics Letters, 2011, 98 (16), 1910 (3)
Abstract: The self-assembly of heteroepitaxial quantum dots on ultrathin substrates is analyzed within the context of small perturbation theory. Analytical expressions are derived for the dependence of the quantum dot separation on the substrate thickness. It is shown that the substrate thickness is critical in determining this separation when it is below the intrinsic material length scale of the system. The model is extended to simultaneous dot growth on both sides of the substrate. It is shown that vertically anticorrelated structures are preferred with an increase in the dot separation of 15% above that found in the one-sided case.
DOI Link: 10.1063/1.3583447
ISSN: 0003-6951
eISSN: 1077-3118
Links: http://link.aip.org/link/?apl/98/161910
http://hdl.handle.net/2381/27832
Version: Publisher Version
Status: Peer-reviewed
Type: Journal Article
Rights: Copyright © 2011 American Institute of Physics. Deposited with reference to the publisher's archiving policy available on the SHERPA/RoMEO website. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, 98 (16), 1910 (3) and may be found at http://link.aip.org/link/?apl/98/161910
Appears in Collections:Published Articles, Dept. of Engineering

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