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Title: Shallow donor state of hydrogen in indium nitride
Authors: Davis, Edward A.
Cox, S.F.J.
Lichti, R.L.
Van de Walle, C.G.
First Published: 27-Jan-2003
Publisher: American Institute of Physics (AIP)
Citation: Applied Physics Letters, 2003, 82 (4), pp. 592-594 (3)
Abstract: The nature of the electron states associated with hydrogen in InN has been inferred by studying the behavior of positive muons, which mimic protons when implanted into semiconductors. The muons capture electrons below 60 K, forming paramagnetic centers with a binding energy of about 12 meV. Together with an exceedingly small muon-electron hyperfine constant indicative of a highly delocalized electron wave function, the results confirm the recently predicted shallow-donor properties of hydrogen in InN.
DOI Link: 10.1063/1.1539547
ISSN: 0003-6951
eISSN: 1077-3118
Version: Publisher Version
Status: Peer-reviewed
Type: Journal Article
Rights: Copyright © 2003 American Institute of Physics. Deposited with reference to the publisher's archiving policy available on the SHERPA/RoMEO website. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, 82 (4), pp. 592-594 and may be found at
Appears in Collections:Published Articles, Dept. of Physics and Astronomy

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