Please use this identifier to cite or link to this item:
|Title:||Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy|
Gill, Simon P.A.
|Publisher:||American Institute of Physics (AIP)|
|Citation:||Applied Physics Letters, 2002, 81 (9), pp. 1708-1710 (3)|
|Abstract:||We present a cross-sectional scanning-tunneling microscopy investigation of the shape, size, and composition of InAs quantum dots in a GaAs matrix, grown by molecular beam epitaxy at low growth rate. From the dimensional analysis we conclude that the investigated quantum dots have an average height of 5 nm, a square base of 18 nm oriented along  and  and the shape of a truncated pyramid. From outward relaxation and lattice constant profiles we conclude that the dots consist of an InGaAs alloy and that the indium concentration increases linearly in the growth direction. Our results justify the predictions obtained from previous photocurrent measurements on similar structures and the used theoretical model.|
|Rights:||Copyright © 2002 American Institute of Physics. Deposited with reference to the publisher's archiving policy available on the SHERPA/RoMEO website. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2002, 81 (9), pp. 1708-1710 and may be found at http://apl.aip.org/resource/1/applab/v81/i9/p1708_s1|
|Appears in Collections:||Published Articles, Dept. of Engineering|
Files in This Item:
|Determination_of_the_shape_and_indium_distribution_revised.pdf||Published (publisher PDF)||564.89 kB||Adobe PDF||View/Open|
Items in LRA are protected by copyright, with all rights reserved, unless otherwise indicated.