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Title: Probing the intermixing in In(Ga)As/GaAs self-assembled quantum dots by Raman scattering
Authors: Ibáñez, J.
Cuscó, R.
Hernández, S.
Artús, L.
Henini, M.
Patanè, A.
Eaves, L.
Roy, Mervyn
Maksym, P.A.
First Published: 16-Feb-2006
Publisher: American Institute of Physics
Citation: Journal of Applied Physics, 2006, 99, 043501.
Abstract: We show that Raman scattering is a sensitive technique for probing the degree of Ga intermixing in In(Ga)As/GaAs self-assembled quantum dots (QDs). The shifts of the QD phonon frequency that we observe are explained by the modification of the strain due to Ga incorporation into the QDs from the GaAs matrix during growth. Using an elastic continuum model, we estimate the average In content of the dots from the QD phonon frequency. The varying amount of intermixing in QDs grown with different In compositions, QD layer thicknesses, growth temperatures, and stacking spacer layer thicknesses are investigated. The Raman data indicate that Ga intermixing is larger for QD samples with low In(Ga)As coverage thickness and/or high growth temperature and, in multilayered systems, for samples with small GaAs spacer layers.
DOI Link: 10.1063/1.2172174
ISSN: 0021-8979
eISSN: 1089-7550
Version: Publisher Version
Status: Peer-reviewed
Type: Journal Article
Rights: Copyright 2006 American Institute of Physics. Deposited with reference to the publisher's archiving policy available on the SHERPA/RoMEO website. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2006, 99, 043501 and may be found at
Appears in Collections:Published Articles, Dept. of Physics and Astronomy

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