Please use this identifier to cite or link to this item: http://hdl.handle.net/2381/27873
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dc.contributor.authorIbáñez, J.-
dc.contributor.authorCuscó, R.-
dc.contributor.authorHernández, S.-
dc.contributor.authorArtús, L.-
dc.contributor.authorHenini, M.-
dc.contributor.authorPatanè, A.-
dc.contributor.authorEaves, L.-
dc.contributor.authorRoy, Mervyn-
dc.contributor.authorMaksym, P.A.-
dc.date.accessioned2013-04-23T15:17:26Z-
dc.date.available2013-04-23T15:17:26Z-
dc.date.issued2006-02-16-
dc.identifier.citationJournal of Applied Physics, 2006, 99, 043501.en
dc.identifier.issn0021-8979-
dc.identifier.urihttp://jap.aip.org/resource/1/japiau/v99/i4/p043501_s1en
dc.identifier.urihttp://hdl.handle.net/2381/27873-
dc.description.abstractWe show that Raman scattering is a sensitive technique for probing the degree of Ga intermixing in In(Ga)As/GaAs self-assembled quantum dots (QDs). The shifts of the QD phonon frequency that we observe are explained by the modification of the strain due to Ga incorporation into the QDs from the GaAs matrix during growth. Using an elastic continuum model, we estimate the average In content of the dots from the QD phonon frequency. The varying amount of intermixing in QDs grown with different In compositions, QD layer thicknesses, growth temperatures, and stacking spacer layer thicknesses are investigated. The Raman data indicate that Ga intermixing is larger for QD samples with low In(Ga)As coverage thickness and/or high growth temperature and, in multilayered systems, for samples with small GaAs spacer layers.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.replaceshttp://hdl.handle.net/2381/7512en
dc.relation.replaces2381/7512en
dc.rightsCopyright 2006 American Institute of Physics. Deposited with reference to the publisher's archiving policy available on the SHERPA/RoMEO website. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2006, 99, 043501 and may be found at http://jap.aip.org/resource/1/japiau/v99/i4/p043501_s1en
dc.subjectScience & Technologyen
dc.subjectPhysical Sciencesen
dc.subjectPhysics, Applieden
dc.subjectPhysicsen
dc.subjectSTRAINen
dc.subjectSEGREGATIONen
dc.subjectMICROSCOPYen
dc.subjectDEPENDENCEen
dc.subjectPHONONSen
dc.subjectGROWTHen
dc.titleProbing the intermixing in In(Ga)As/GaAs self-assembled quantum dots by Raman scatteringen
dc.typeJournal Articleen
dc.identifier.doi10.1063/1.2172174-
dc.identifier.eissn1089-7550-
dc.description.statusPeer-revieweden
dc.description.versionPublisher Versionen
dc.type.subtypeArticle;Journal-
pubs.organisational-group/Organisationen
pubs.organisational-group/Organisation/COLLEGE OF SCIENCE AND ENGINEERINGen
pubs.organisational-group/Organisation/COLLEGE OF SCIENCE AND ENGINEERING/Department of Physics and Astronomyen
dc.relation.deptCondensed Matter Physics-
Appears in Collections:Published Articles, Dept. of Physics and Astronomy

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