Please use this identifier to cite or link to this item: http://hdl.handle.net/2381/28281
Title: Temperature dependence of the average electron-hole pair creation energy in Al[subscript 0.8]Ga[subscript 0.2]As
Authors: Barnett, Anna M.
Lees, John E.
Bassford, David J.
First Published: 10-May-2013
Publisher: American Institute of Physics (AIP)
Citation: Applied Physics Letters, 2013, 102 (18), 181119
Abstract: The temperature dependence of the average energy consumed in the creation of an electron-hole pair in the wide bandgap compound semiconductor Al[subscript 0.8]Ga[subscript 0.2]As is reported following X-ray measurements made using an Al[subscript 0.8]Ga[subscript 0.2]As photodiode diode coupled to a low-noise charge-sensitive preamplifier operating in spectroscopic photon counting mode. The temperature dependence is reported over the range of 261 K–342K and is found to be best represented by the equation ε[subscript AlGaAs]=7.327–0.0077 T, where ε[subscript AlGaAs] is the average electron-hole pair creation energy in eV and T is the temperature in K.
DOI Link: 10.1063/1.4804989
ISSN: 0003-6951
eISSN: 1077-3118
Links: http://apl.aip.org/resource/1/applab/v102/i18/p181119_s1
http://hdl.handle.net/2381/28281
Version: Publisher Version
Status: Peer-reviewed
Type: Journal Article
Rights: Copyright © The Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License (http://creativecommons.org/licenses/by/3.0/).
Appears in Collections:Published Articles, Dept. of Physics and Astronomy

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