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|Title:||Temperature dependence of the average electron-hole pair creation energy in Al[subscript 0.8]Ga[subscript 0.2]As|
|Authors:||Barnett, Anna M.|
Lees, John E.
Bassford, David J.
|Publisher:||American Institute of Physics (AIP)|
|Citation:||Applied Physics Letters, 2013, 102 (18), 181119|
|Abstract:||The temperature dependence of the average energy consumed in the creation of an electron-hole pair in the wide bandgap compound semiconductor Al[subscript 0.8]Ga[subscript 0.2]As is reported following X-ray measurements made using an Al[subscript 0.8]Ga[subscript 0.2]As photodiode diode coupled to a low-noise charge-sensitive preamplifier operating in spectroscopic photon counting mode. The temperature dependence is reported over the range of 261 K–342K and is found to be best represented by the equation ε[subscript AlGaAs]=7.327–0.0077 T, where ε[subscript AlGaAs] is the average electron-hole pair creation energy in eV and T is the temperature in K.|
|Rights:||Copyright © The Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License (http://creativecommons.org/licenses/by/3.0/).|
|Appears in Collections:||Published Articles, Dept. of Physics and Astronomy|
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