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Title: Impact of dynamic voltage scaling and thermal factors on SRAM reliability
Authors: Rosa, F. R.
Brum, R. M.
Wirth, G.
Kastensmidt, F.
Ost, Luciano
Reis, R.
First Published: 21-Jul-2015
Presented at: 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Toulouse, France.
Start Date: 5-Oct-2015
End Date: 9-Oct-2015
Publisher: Elsevier
Citation: Microelectronics Reliability, 2015, 55 (9-10), pp. 1486–1490, Proceedings of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Abstract: This work investigates the effects of temperature and voltage scaling in neutron-induced bit-flip in SRAM memory cells. Proposed approach allows determining the critical charge according to the dynamic behavior of the temperature as a function of the voltage scaling. Experimental results show that both temperature and voltage scaling can increase in at least two times the susceptibility of SRAM cells to soft error rate (SER). In addition, a model for electrical simulation for soft error and different voltages was described to investigate the effects observed in the practical neutron irradiation experiments. Results can guide designers to predict soft error effects during the lifetime of SRAM-based devices considering different power supply modes.
DOI Link: 10.1016/j.microrel.2015.07.013
ISSN: 0026-2714
Version: Post-print
Status: Peer-reviewed
Type: Journal Article
Rights: Copyright © Elsevier, 2015. This is an open-access article distributed under the terms of the Creative Commons Attribution-Non Commercial-No Derivatives License ( ), which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.
Appears in Collections:Published Articles, Dept. of Engineering

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