Please use this identifier to cite or link to this item:
Title: Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy
Authors: Krammel, C. M.
Roy, M.
Tilley, F. J.
Maksym, P. A.
Zhang, L. Y.
Wang, P.
Wang, K.
Li, Y. Y.
Wang, M.
Koenraad, P. M.
First Published: 24-Aug-2017
Publisher: American Physical Society
Citation: Physical Review Materials, 2017, 1 (3) 034606
Abstract: We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi:InP. Bismuth atoms down to the second monolayer below the {110} InP surfaces, which give rise to three classes of distinct contrast, are identified with the help of density functional theory calculations. Based on this classification, the pair-correlation function is used to quantify the ordering of Bi atoms on the long range. In a complementary short-ranged study, we investigate the Bi ordering at the atomic level. An enhanced tendency for the formation of first-nearest-neighbor Bi pairs is found. In addition, the formation of small Bi clusters is observed whose geometries appear to be related to strong first-nearest-neighbor Bi pairing. We also identify growth related crystal defects, such as In vacancies, P antisites, and Bi antisites.
DOI Link: 10.1103/PhysRevMaterials.1.034606
eISSN: 2475-9953
Version: Publisher Version
Status: Peer-reviewed
Type: Journal Article
Rights: Copyright © 2017, American Physical Society. Deposited with reference to the publisher’s open access archiving policy.
Appears in Collections:Published Articles, Dept. of Physics and Astronomy

Files in This Item:
File Description SizeFormat 
Bi-InP_Krammel_PRM_rev.pdfPost-review (final submitted author manuscript)91.41 MBAdobe PDFView/Open
SupplementalMaterial_Krammel.pdfPost-review (final submitted author manuscript)275.35 kBAdobe PDFView/Open
PhysRevMaterials.1.034606.pdfPublished (publisher PDF)2.05 MBAdobe PDFView/Open

Items in LRA are protected by copyright, with all rights reserved, unless otherwise indicated.