Please use this identifier to cite or link to this item: http://hdl.handle.net/2381/43616
Title: Gate-emitter Pre-threshold Voltage as a Health Sensitive Parameter for IGBT Chip Failure Monitoring in High Voltage Multichip IGBT Power Modules
Authors: Mandeya, R
Chen, C
Pickert, V
Naayagi, RT
Ji, B
First Published: 30-Nov-2018
Publisher: Institute of Electrical and Electronics Engineers
Citation: IEEE Transactions on Power Electronics, 2018, in press
Abstract: IEEE This paper proposes a novel health sensitive parameter, called the gate-emitter pre-threshold voltage VGE(pre-th), for detecting IGBT chip failures in multichip IGBT power modules. The proposed method has been applied in an IGBT gate driver and measures the VGE at a fixed time instant of the VGE transient before the threshold voltage occurs. To validate the proposed method, theoretical analysis and practical results for a 16-chip IGBT power module are presented in the paper. The results show a 500 mV average shift in the measured VGE(pre-th) for each IGBT chip failure.
DOI Link: 10.1109/TPEL.2018.2884276
ISSN: 0885-8993
eISSN: 1941-0107
Links: https://ieeexplore.ieee.org/document/8554121
http://hdl.handle.net/2381/43616
Version: Post-print
Status: Peer-reviewed
Type: Journal Article
Rights: Copyright © 2018 IEEE. Deposited with reference to the publisher’s open access archiving policy. (http://www.rioxx.net/licenses/all-rights-reserved)
Appears in Collections:Published Articles, Dept. of Engineering

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