Please use this identifier to cite or link to this item: http://hdl.handle.net/2381/44082
Title: An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy
Authors: Xu, H
Ye, H
Coathup, D
Mitrovic, IZ
Weerakkody, AD
Hu, X
First Published: 17-Jan-2017
Publisher: AIP Publishing
Citation: Applied Physics Letters, 2017, 110, 033102
Abstract: The impedance spectroscopy measurements were used to investigate the separated contributions of diamond grains and grain boundaries (GBs), giving an insight into p-type to n-type conductivity conversion in O+-implanted ultrananocrystalline diamond (UNCD) films. It is found that both diamond grains and GBs promote the conductivity in O+-implanted UNCD films, in which GBs make at least half contribution. The p-type conductivity in O+-implanted samples is a result of H-terminated diamond grains, while n-type conductive samples are closely correlated with O-terminated O+-implanted diamond grains and GBs in the films. The results also suggest that low resistance of GBs is preferable to obtain high mobility n-type conductive UNCD films.
DOI Link: 10.1063/1.4974077
ISSN: 0003-6951
Links: https://aip.scitation.org/doi/10.1063/1.4974077
http://hdl.handle.net/2381/44082
Version: Publisher Version
Status: Peer-reviewed
Type: Journal Article
Rights: Copyright © 2017, AIP Publishing. Deposited with reference to the publisher’s open access archiving policy. (http://www.rioxx.net/licenses/all-rights-reserved)
Description: See supplementary material ftp://ftp.aip.org/epaps/appl_phys_lett/E-APPLAB-110-034703 for the complex impedance of samples and temperature dependent I–V measurement results of samples 900-A and O12900.
Appears in Collections:Published Articles, Dept. of Engineering

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