Please use this identifier to cite or link to this item:
|Title:||Enhanced Donor Binding Energy Close to a Semiconductor Surface|
|Publisher:||American Physical Society|
|Citation:||Physical Review Letters, 2009, 102, 166101.|
|Abstract:||We measured the ionization threshold voltage of individual impurities close to a semiconductor-vacuum interface, where we use the STM tip to ionize individual donors. We observe a reversed order of ionization with depth below the surface, which proves that the binding energy is enhanced towards the surface. This is in contrast to the predicted reduction for a Coulombic impurity in the effective mass approach. We can estimate the binding energy from the ionization threshold and show experimentally that in the case of silicon doped gallium arsenide the binding energy gradually increases over the last 1.2 nm below the (110) surface.|
|Description:||This paper was published as Physical Review Letters, 2009, 102, 166101. Copyright American Physical Society. It is available from http://prl.aps.org/abstract/PRL/v102/i16/e166101. Doi: 10.1103/PhysRevLett.102.166101|
Metadata only entry
|Appears in Collections:||Published Articles, Dept. of Physics and Astronomy|
Files in This Item:
There are no files associated with this item.
Items in LRA are protected by copyright, with all rights reserved, unless otherwise indicated.