Leicester Research Archive

Leicester Research Archive >
College of Science and Engineering >
Physics and Astronomy, Department of >
Published Articles, Dept. of Physics and Astronomy >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2381/7517

Title: Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy
Authors: Offermans, P.
Koenraad, P.M.
Wolter, J.H.
Pierz, K.
Roy, Mervyn
Maksym, P.A.
Issue Date: Feb-2005
Publisher: Elsevier
Citation: Physica E: Low-dimensional Systems and Nanostructures, 2005, 26 (1-4), pp. 236-240.
Abstract: We have used cross-sectional scanning-tunneling microscopy (X-STM) to compare the formation of self-assembled InAs quantum dots (QDs) and wetting layers on AlAs (1 0 0) and GaAs (1 0 0) surfaces. On AlAs we find a larger QD density and smaller QD size than for QDs grown on GaAs under the same growth conditions (500 °C substrate temperature and 1.9 ML indium deposition). The QDs grown on GaAs show both a normal and a lateral gradient in the indium distribution whereas the QDs grown on AlAs show only a normal gradient. The wetting layers on GaAs and AlAs do not show significant differences in their composition profiles. We suggest that the segregation of the wetting layer is mainly strain-driven, whereas the formation of the QDs is also determined by growth kinetics. We have determined the indium composition of the QDs by fitting it to the measured outward relaxation and lattice constant profile of the cleaved surface using a three-dimensional finite element calculation based on elasticity theory.
ISSN: 1386-9477
Links: http://dx.doi.org/10.1016/j.physe.2004.08.104
http://hdl.handle.net/2381/7517
Type: Article
Description: This paper was published as Physica E: Low-dimensional Systems and Nanostructures, 2006, 26 (1-4), pp. 236-240. It is available from http://www.sciencedirect.com/science/journal/13869477. Doi: 10.1016/j.physe.2004.08.104
Metadata only format
Appears in Collections:Published Articles, Dept. of Physics and Astronomy

Files in This Item:

There are no files associated with this item.

View Statistics

Items in LRA are protected by copyright, with all rights reserved, unless otherwise indicated.

 

MAINTAINER